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Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
https://nitech.repo.nii.ac.jp/records/5173
https://nitech.repo.nii.ac.jp/records/5173c6904905-b9fd-4abb-b0f4-b0f4d1f2e84f
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (176.4 kB)
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Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 84(4),pp.613-615; 2004 and may be found at http://link.aip.org/link/?apl/84/613
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||||||
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| タイトル | Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 言語 | ||||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||
| 著者 |
Arulkumaran, S.
× Arulkumaran, S.
× 江川, 孝志
× Ishikawa, H.
× Jimbo, Takashi
× Sano, Y.
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| 著者別名 | ||||||||||||||||||||||
| 姓名 | Egawa, Takashi | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 姓名 | 江川, 孝志 | |||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||
| 姓名 | エガワ, タカシ | |||||||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 84, 号 4, p. 613-615, 発行日 2004-01-26 |
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| 出版者 | ||||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| ISSN | ||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||||
| 収録物識別子 | AA00543432 | |||||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1642276 | |||||||||||||||||||||
| 関連名称 | 10.1063/1.1642276 | |||||||||||||||||||||
| 内容記述 | ||||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||||
| 内容記述 | Surface passivation effects were studied on AlGaN/GaN high-electron-mobility transistors (HEMTs) using SiO2, Si3N4, and silicon oxynitride (SiON) formed by plasma enhanced chemical vapor deposition. An increase of IDmax and gmmax has been observed on the passivated (SiO2, Si3N4 and SiON) HEMTs when compared with the unpassivated HEMTs. About an order of magnitude low IgLeak and three orders of magnitude high IgLeak was observed on Si3N4 and SiO2 passivated HEMTs, respectively, when compared with the unpassivated HEMTs. The increase of IgLeak is due to the occurrence of surface related traps, which was confirmed by the observation of kink and hysteresis effect on dc and ac IDS-VDS characteristics, respectively. Though the Si3N4 passivated HEMTs show better dc characteristics, the breakdown voltage (BVgd) characteristics are not comparable with SiO2, SiON passivated and unpassivated HEMTs. The SiON is also a very promising candidate as a surface passivant for AlGaN/GaN HEMTs because it shows better BVgd with low hysteresis width and small ID collapse than Si3N4 passivated HEMTs. | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
