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Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate
https://nitech.repo.nii.ac.jp/records/6162
https://nitech.repo.nii.ac.jp/records/6162127e9d60-13ed-4318-bc43-a1a0a6b2d434
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (826.3 kB)
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Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in [See also CITATION, DOI] and may be found at https://doi.org/10.1063/1.4930876
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-01-11 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Freedsman, J.J.
× Freedsman, J.J.× Watanabe, A.× Urayama, Y.× Egawa, Takashi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
書誌情報 |
en : Applied Physics Letters 巻 107, 号 10, p. 103506, 発行日 2015-09-07 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.4930876 | |||||
関連名称 | 10.1063/1.4930876 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |