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Native defects in the AlxGa1-xSb alloy semiconductor
https://nitech.repo.nii.ac.jp/records/4061
https://nitech.repo.nii.ac.jp/records/4061cdb320ab-23c2-495a-af29-f4a9d4e790bd
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (431.8 kB)
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Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 68(12), pp.6153- 6158 ; 1990and may be found at http://link.aip.org/link/?jap/68/6153
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Native defects in the AlxGa1-xSb alloy semiconductor | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Higuchi, K.
× Hattori, Y.
× Wada, T.
× Kitamura, N.
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| 著者別名 | ||||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 68, 号 12, p. 6153-6158, 発行日 1990-12-15 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| item_10001_relation_34 | ||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.346904 | |||||||||||||||
| 関連名称 | 10.1063/1.346904 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | Defect concentrations in AlxGa1-xSb which is in equilibrium with a liquid phase are calculated. When the liquid phase is Ga rich, a Ga antisite (Ga2-Sb) or an Al antisite (Al2-Sb) is dominant, and the concentrations of vacancies are much smaller than the antisite concentrations. Ga2-Sb is dominant in GaSb equilibrated with a Sb‐rich solution, but the concentration of Sb antisites comes close to that of Ga2-Sb as temperature is lowered. For x larger than 0.6, a group‐III vacancy is the predominant defect in the case of Sb‐rich solutions. Calculated net acceptor concentrations agree well with those determined experimentally. A complex defect composed of GaSb and a Ga vacancy, which have been taken as the dominant residual acceptor, is expected to be negligible. | |||||||||||||||
| 言語 | en | |||||||||||||||
