WEKO3
アイテム
Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy
https://nitech.repo.nii.ac.jp/records/4208
https://nitech.repo.nii.ac.jp/records/4208c8a85434-78d8-44ba-9eaa-78ea004cc21b
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (388.7 kB)
|
Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 62(15),pp.1800-1802 ; 1993 and may be found at http://link.aip.org/link/?apl/62/1800
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Usami, A.
× Wada, T.
× Fujita, Sz
× Fujita, Sg
|
|||||||||||||||||
| 著者別名 | ||||||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 62, 号 15, p. 1800-1802, 発行日 1993-04-12 |
|||||||||||||||||
| 出版者 | ||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| ISSN | ||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||
| 収録物識別子 | AA00543431 | |||||||||||||||||
| 出版タイプ | ||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.109554 | |||||||||||||||||
| 関連名称 | 10.1063/1.109554 | |||||||||||||||||
| 内容記述 | ||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||
| 内容記述 | We demonstrate that the nature of the interface between ZnSe and semi‐insulating GaAs can be studied by observing the phonon‐plasmon coupled mode by micro‐Raman spectroscopy. When the GaAs substrate is sulfur‐treated before the growth of ZnSe, the phonon‐plasmon coupled mode is clearly observed in micro‐Raman spectra. The plasmon is believed to be composed of electrons excited by the focused laser beam used in the micro‐Raman measurement. The coupled mode is weak when the substrate is not sulfur‐treated. The reduction in the coupled‐mode intensity will be due to interface states which widen the depletion layer and shorten the lifetime of excess carriers. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
