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High efficiency AIGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition
https://nitech.repo.nii.ac.jp/records/4369
https://nitech.repo.nii.ac.jp/records/43698852e009-7820-4c48-9ca1-9e72f7a874c4
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (430.1 kB)
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Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 78(6), pp.4196- 4199 ; 1995 and may be found at http://link.aip.org/link/?jap/78/4196
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | High efficiency AIGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Soga, Tetsuo
× Soga, Tetsuo× Kato, T.× Yang, M.× Umeno, Masayoshi× Jimbo, Takashi |
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著者別名 | ||||||
姓名 | 曾我, 哲夫 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 78, 号 6, p. 4196-4199, 発行日 1995-09-15 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.359880 | |||||
関連名称 | 10.1063/1.359880 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active‐area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active‐area conversion efficiency of 19.9% and 20.6% (AM0 and 1 sun at 27°C) under two‐terminal and four‐terminal configurations, respectively, is demonstrated. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |