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Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers
https://nitech.repo.nii.ac.jp/records/5020
https://nitech.repo.nii.ac.jp/records/50204139536f-c586-4db4-94ee-c44a2e8ad652
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (325.9 kB)
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Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 90(11), pp.5463 - 5468; 2001 and may be found at http://link.aip.org/link/?jap/90/5463
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Kazi, Zaman Iqbal
× Kazi, Zaman Iqbal× Egawa, Takashi× Umeno, Masayoshi× Jimbo, Takashi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 90, 号 11, p. 5463-5468, 発行日 2001-12-01 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1375010 | |||||
関連名称 | 10.1063/1.1375010 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The growth conditions of low-dimensional dot structures of strained InxGa1-xAs on Si substrates using the Stranski-Krastanov growth mode by metal-organic chemical vapor deposition are optimized. Atomic force microscopy measurement has been performed to characterize the dot structures. The dot density and their size are found to be strongly dependent on the substrate temperature, In content, and V/III ratio. The optimized growth condition was further used to fabricate quantum dot-like laser diodes on Si. The characteristics of the laser diode with an InxGa1-xAs quantum dot-like active region are analyzed. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |