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Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field
https://nitech.repo.nii.ac.jp/records/5159
https://nitech.repo.nii.ac.jp/records/51591fc5f5d4-b6ae-4529-9520-a9ddfbdb6192
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (172.2 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 83(5),pp.928-930 ; 2003 and may be found at http://link.aip.org/link/?apl/83/928
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Kuwayama, Toshio
× Kuwayama, Toshio
× Ichimura, Masaya
× Arai, Eisuke
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| 著者別名 | ||||||||||||
| 姓名 | 市村, 正也 | |||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 83, 号 5, p. 928-930, 発行日 2003-08-04 |
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| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00543431 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| item_10001_relation_34 | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1597988 | |||||||||||
| 関連名称 | 10.1063/1.1597988 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | The interface recombination velocity of silicon-on-insulator (SOI) wafers was measured by the microwave-reflectance photoconductivity-decay method. The carrier lifetime was obtained with interface recombination suppressed by applying voltage between the SOI layer and the substrate. The interface recombination velocity was then estimated by comparing two lifetime values with and without voltage application. The velocity is from 500 to 1800 cm/s, relatively large as for thermally oxidized Si/SiO2 interfaces. | |||||||||||
| 言語 | en | |||||||||||
