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Exchange biasing of a Neel wall in the nanocontact between NiFe wires
https://nitech.repo.nii.ac.jp/records/5220
https://nitech.repo.nii.ac.jp/records/5220dba7ab0a-a584-4c8a-b566-ab423d98a2b8
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (869.0 kB)
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Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 97(7), pp.014309-1- 014309-6 ; 2004 and may be found at http://link.aip.org/link/?jap/97/014309
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Exchange biasing of a Neel wall in the nanocontact between NiFe wires | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Miyake, K.
× Miyake, K.× Shigeto, K.× Yokoyama, Y.× Ono, T.× Mibu, Ko× Shinjo, T. |
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著者別名 | ||||||
姓名 | 壬生, 攻 | |||||
書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 97, 号 1, p. 014309-1-014309-6, 発行日 2004-12-14 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1829143 | |||||
関連名称 | 10.1063/1.1829143 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | We fabricated nanocontact structures (typically in a range from 15×13 nm2 to 20×40 nm2) between Ni81Fe19 wires using electron-beam lithography and a lift-off process. In the magnetization reversal process for each sample, two kinds of magnetic domain walls with different magnetic configurations were trapped at the nanocontact between the two wires. The directions of the magnetization in the nanocontact were different between the two domain walls. These walls yielded different values of electric resistance and different depinning fields. The magnetization of the nanocontact suppresses or assists the magnetization rotation in the connected magnetic element through exchange interaction (exchange biasing), which causes the differences in the depinning field and dominates the magnetization process of the magnetic element. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |