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Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors
https://nitech.repo.nii.ac.jp/records/5655
https://nitech.repo.nii.ac.jp/records/5655650b9d95-2029-4cb1-b37c-bb0acc448d7a
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (1.8 MB)
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(c) 2012 by Authors. licensee American Institute of Physics. Creative Commons Attribution Licence http://creativecommons.org/licenses/by/3.0/
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-06-11 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Freedsman, Joseph J.
× Freedsman, Joseph J.× Kubo, Toshiharu× Egawa, Takashi |
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著者別名 | ||||||
姓名 | 久保, 俊晴 | |||||
著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
書誌情報 |
AIP advances 巻 2, 号 2, p. 022134-1-022134-9, 発行日 2012-06 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 21583226 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.4722642 | |||||
関連名称 | 10.1063/1.4722642 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |