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Bonds in III-V quaternary alloy semiconductors of A1-xIIIBxIIIC1-yVDyV type
https://nitech.repo.nii.ac.jp/records/3918
https://nitech.repo.nii.ac.jp/records/39183392ad43-f4c0-46a8-82df-ad39a1a027dd
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (1.5 MB)
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(c)1987 The American Physical Society
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||
| タイトル | ||||||||||
| タイトル | Bonds in III-V quaternary alloy semiconductors of A1-xIIIBxIIIC1-yVDyV type | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Sasaki, Akio
|
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| 著者別名 | ||||||||||
| 姓名 | 市村, 正也 | |||||||||
| 書誌情報 |
en : PHYSICAL REVIEW B 巻 36, 号 18, p. 9694-9702, 発行日 1987-12-15 |
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| 出版者 | ||||||||||
| 出版者 | American Physical Society | |||||||||
| 言語 | en | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0163-1829 | |||||||||
| item_10001_source_id_32 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00362255 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| item_10001_relation_34 | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | http://dx.doi.org/10.1103/PhysRevB.36.9694 | |||||||||
| 関連名称 | 10.1103/PhysRevB.36.9694 | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Relative numbers or statistics of bonds in III-V quaternary alloy semiconductors of A1-xIIIBxIIIC1-yVDyV type are uniquely determined through a thermodynamical approach in which the cohesive and the strain energies of bonds are taken as the enthalpy in the analysis. The valence-force-field model is used for calculating the strain energy, and the effect of local environment on the bond strain is considered. The analysis is applied to nine different quaternary alloy semiconductors composed of two elements of Al, Ga, or In as the group-III elements and two elements of P, As, or Sb as the group-V elements. The strain energy is a predominant factor in In1-xGaxC1-yVDyV (CV,DV=P,As,Sb), the cohesive energy is a predominant factor in Ga1-xAlxC1-yVDy, and both factors compensate each other almost completely in In1-xAlxC1-yVDyV. The results are interpreted on the basis of the bond-length dependence of each energy. | |||||||||
| 言語 | en | |||||||||
