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Point defect concentrations in InGaAsP quaternary alloys
https://nitech.repo.nii.ac.jp/records/4082
https://nitech.repo.nii.ac.jp/records/4082f7f5bf42-3961-4ab1-b326-bb14fb0c1df6
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (312.8 kB)
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Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 69(7), pp.4140- 4142 ; 1991and may be found at http://link.aip.org/link/?jap/69/4140
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||
| タイトル | ||||||||||
| タイトル | Point defect concentrations in InGaAsP quaternary alloys | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Wada, Takao
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| 著者別名 | ||||||||||
| 姓名 | 市村, 正也 | |||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 69, 号 7, p. 4140-4142, 発行日 1991-04-01 |
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| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 言語 | en | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0021-8979 | |||||||||
| item_10001_source_id_32 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00693547 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| item_10001_relation_34 | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.348431 | |||||||||
| 関連名称 | 10.1063/1.348431 | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Point defect concentrations in InGaAsP grown from liquid phases were calculated. Vacancies and antisites were taken to be dominant defects. The calculated antisite concentrations decrease with increasing band gap, while the vacancy concentrations are weakly dependent on composition. Although development of dislocations is known to be easier in InGaAsP lattice matched to GaAs than in those lattice matched to InP, the difference in the vacancy concentration between them is small when their growth temperatures are assumed to be the same. However, a high growth temperature usually adopted for InGaAsP on GaAs will result in larger vacancy concentrations. | |||||||||
| 言語 | en | |||||||||
