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Room-temperature photochemical hole burning in Eu3+ -doped Al2O3-SiO2 glass
https://nitech.repo.nii.ac.jp/records/4753
https://nitech.repo.nii.ac.jp/records/4753e8f8c0bc-8801-4f59-9340-8ad14edf71d8
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (58.1 kB)
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Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 75(20),pp.3072 - 3074; 1999 and may be found at http://link.aip.org/link/?apl/75/3072
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Room-temperature photochemical hole burning in Eu3+ -doped Al2O3-SiO2 glass | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Nogami, Masayuki
× Nogami, Masayuki
× Hayakawa, Tomokatsu
× Ishikawa, Tomotaka
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| 著者別名 | ||||||||||||
| 姓名 | 野上, 正行 | |||||||||||
| 著者別名 | ||||||||||||
| 姓名 | 早川, 知克 | |||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 75, 号 20, p. 3072-3074, 発行日 1999-11-15 |
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| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00543432 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | Persistent spectral hole burning was observed at room temperature in Eu3+-doped Al2O3-SiO2 glass. The glass was obtained by heating in hydrogen gas to reduce some Eu3+ ions to Eu2+ and the spectral hole was burned in the excitation spectrum of the 7F0→5D0 transition of Eu3+. The depth of the hole burned at 200 K was ?7% of the total excitation intensity and independent of temperature up to 350 K. A possible mechanism for hole burning is the electron transfer between the Eu3+ ions and the Al-related defect centers. | |||||||||||
| 言語 | en | |||||||||||
