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Crystallization of amorphous germanium in an Al/a-Ge bilayer film deposited on a SiO2 substrate
https://nitech.repo.nii.ac.jp/records/4941
https://nitech.repo.nii.ac.jp/records/494112cb96ab-9f3b-4d33-a8ed-5f04b3b6c731
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (591.0 kB)
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Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 89(8), pp.4643- 4647 ; 2001 and may be found at http://link.aip.org/link/?jap/89/4643
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Crystallization of amorphous germanium in an Al/a-Ge bilayer film deposited on a SiO2 substrate | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Katsuki, Futoshi
× Katsuki, Futoshi
× Hanafusa, Kenji
× Yonemura, Mitsuharu
× Koyama, Toshiyuki
× Doi, Minoru
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| 著者別名 | ||||||||||||||||
| 姓名 | 土井, 稔 | |||||||||||||||
| bibliographic_information |
en : JOURNAL OF APPLIED PHYSICS 巻 89, 号 8, p. 4643-4647, 発行日 2001-04-15 |
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| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| item_10001_relation_34 | ||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1359149 | |||||||||||||||
| 関連名称 | 10.1063/1.1359149 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | The crystallization of amorphous Ge(a-Ge) in an Al (134 nm) and a-Ge (108 nm) thin-film bilayer deposited on a SiO2 substrate has been examined by a cross section transmission electron microscope technique. When crystallization of a-Ge begins at 125°C, amorphous AlGe (a-AlGe) alloy is formed in the Ge layer. Then, the a-AlGe alloy layer also appeared at the surface of the bilayer. After complete crystallization, those amorphous layers disappeared and the bilayer film has been converted to a polycrystalline film. We discussed the crystallization of a-Ge and proposed the mechanism of the diffusion of Ge atoms from the inner a-Ge layer through the outer Al layer to the topmost surface that involves the formation of the metastable a-AlGe alloy in the Ge layer, followed by the crystallization of this alloy by the pseudo-eutectic reaction, leading to the decomposition into an equilibrium Al and Ge crystal mixture and a-Ge. Then, Ge atoms is released to the Al layer for the compensation of the Al diffusion down into the Ge layer and again forms the a-AlGe alloy in the Al layer. The a-AlGe alloy in the Al layer is also crystallized by the pseudo-eutectic reaction. Consequently, decomposed a-Ge is ejected from the inside to the surface of the bilayer, resulting in the surface Ge segregation. | |||||||||||||||
| 言語 | en | |||||||||||||||
