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Infrared ellipsometry of GaAs epilayers on Si(100)
https://nitech.repo.nii.ac.jp/records/5127
https://nitech.repo.nii.ac.jp/records/5127974490fc-abfc-4ce2-b14d-d49e40376c54
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (52.6 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(11),pp.1730 - 1732; 2003 and may be found at http://link.aip.org/link/?apl/82/1730
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2012-11-06 | |||||
| タイトル | ||||||
| タイトル | Infrared ellipsometry of GaAs epilayers on Si(100) | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Yu, G.
× Yu, G.× Rowell, N. L.× Lockwood, D. J.× 曾我, 哲夫 |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 3257 | |||||
| 識別子Scheme | NRID | |||||
| 識別子URI | http://rns.nii.ac.jp/nr/1000020197007 | |||||
| 識別子 | 1000020197007 | |||||
| 姓名 | Soga, Tetsuo | |||||
| 言語 | en | |||||
| 姓名 | 曾我, 哲夫 | |||||
| 言語 | ja | |||||
| 姓名 | ソガ, テツオ | |||||
| 言語 | ja-Kana | |||||
| 識別子Scheme | ISNI | |||||
| 識別子URI | http://www.isni.org/isni/ | |||||
| 書誌情報 |
APPLIED PHYSICS LETTERS 巻 82, 号 11, p. 1730-1732, 発行日 2003-03-17 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00036951 | |||||
| 書誌レコードID（NCID） | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543432 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1561577 | |||||
| 関連名称 | 10.1063/1.1561577 | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Infrared spectroscopic ellipsometry is used to characterize the structure of molecular-beam-epitaxial grown GaAs layers on Si(100) before and after thermal cycle (TC) annealing. The dielectric function of the GaAs epilayer has been described by the sum of a factorized form and a classical Drude model in the spectral fitting procedure. The epilayer LO phonon frequency shifts toward lower frequency with increasing TC number while the opposite is seen for TO phonon. The shift of the LO mode indicates that the tensile stress increases with increasing TC number, while the shift of the TO mode is attributed mainly to the self-energy effect in GaAs:Si. Unequal thermal diffusion of SiAs- and SiGa+ is indicated. | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
