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Optical cross sections of deep levels in 4H-SiC
https://nitech.repo.nii.ac.jp/records/5311
https://nitech.repo.nii.ac.jp/records/531106573967-cde8-4470-9e2b-739024eb8446
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (137.4 kB)
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Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 100(5), pp.053708-1- 053708-3 ; 2006 and may be found at http://link.aip.org/link/?jap/100/053708
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||||
| タイトル | ||||||||||||||||||||
| タイトル | Optical cross sections of deep levels in 4H-SiC | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| 言語 | ||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||
| 著者 |
Kato, Masashi
× Kato, Masashi
× Tanaka, S.
× Ichimura, Masaya
× Arai, E.
× Nakamura, S.
× Kimoto, T.
× Passler, R.
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| 著者別名 | ||||||||||||||||||||
| 姓名 | 加藤, 正史 | |||||||||||||||||||
| 著者別名 | ||||||||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 100, 号 5, p. 053708-1-053708-8, 発行日 2006-09-13 |
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| 出版者 | ||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| ISSN | ||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.2344809 | |||||||||||||||||||
| 関連名称 | 10.1063/1.2344809 | |||||||||||||||||||
| 内容記述 | ||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||
| 内容記述 | We have characterized deep levels in 4H-SiC epilayers grown by cold wall chemical vapor deposition by the deep level transient spectroscopy (DLTS) and the optical-capacitance-transient spectroscopy (O-CTS). Four kinds of DLTS peaks were detected in the epilayers. Three of them are identified as the Z1/2, EH6/7, and RD1/2 centers, while the other one has never been reported previously, and was named the NB center. On the basis of these DLTS data we have estimated the thermal ionization energies. The classical optical ionization energies of these centers, which are given by the sums of thermal ionization energies and Franck-Condon shifts, were estimated via fittings of the measured optical cross sections from O-CTS data by means of a sufficiently general theoretical model. Temperature dependences of nonradiative multiphonon carrier capture cross sections for the Z1/2 and NB centers were roughly estimated in terms of parametrical dependences on thermal ionization energies and Franck-Condon shifts. | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
