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{"_buckets": {"deposit": "09d02d56-80d5-4703-b4ad-a4a468ca22ae"}, "_deposit": {"created_by": 3, "id": "4956", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "4956"}, "status": "published"}, "_oai": {"id": "oai:nitech.repo.nii.ac.jp:00004956", "sets": ["31"]}, "author_link": ["13922", "4028", "16328", "3257", "4015"], "item_10001_biblio_info_28": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2001-05-28", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "22", "bibliographicPageEnd": "3465", "bibliographicPageStart": "3463", "bibliographicVolumeNumber": "78", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_10001_description_36": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "The phosphidization effect on dislocations in GaAs grown on Si substrate (GaAs/Si) has been investigated. It was found that the high density of dislocations in GaAs/Si heteroepitaxial layers largely enhanced the diffusion of phosphorus (P) atoms during the phosphine (PH3) plasma exposure. The incorporated P atoms strongly passivated the electrical states of residual dislocations in GaAs/Si solar cell. As a result, the PH3 plasma exposure largely increased the open circuit voltage (Voc) and the efficiency of GaAs/Si solar cell.", "subitem_description_type": "Other"}]}, "item_10001_description_38": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_10001_full_name_27": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "3257", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000020197007 ", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/nr/1000020197007 "}], "names": [{"name": "曾我, 哲夫"}]}, {"nameIdentifiers": [{"nameIdentifier": "4028", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "神保, 孝志"}]}, {"nameIdentifiers": [{"nameIdentifier": "4015", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "梅野, 正義"}]}]}, "item_10001_publisher_29": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10001_relation_34": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1063/1.1376433"}], "subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.1376433", "subitem_relation_type_select": "DOI"}}]}, "item_10001_source_id_30": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "00036951", "subitem_source_identifier_type": "ISSN"}]}, "item_10001_source_id_32": {"attribute_name": "書誌レコードID(NCID)", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543432", "subitem_source_identifier_type": "NCID"}]}, "item_10001_version_type_33": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Wang, G.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13922", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ogawa, T.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "16328", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Soga, Tetsuo", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "3257", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000020197007 ", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/nr/1000020197007 "}]}, {"creatorNames": [{"creatorName": "Jimbo, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "4028", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Umeno, Masayoshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "4015", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-01-25"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL 78_3463.pdf", "filesize": [{"value": "192.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensefree": "Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 78(22), pp.3463-3465; 2001 and may be found at http://link.aip.org/link/?apl/78/3463", "licensetype": "license_free", "mimetype": "application/pdf", "size": 192500.0, "url": {"label": "本文_fulltext", "url": "https://nitech.repo.nii.ac.jp/record/4956/files/APL 78_3463.pdf"}, "version_id": "f58d2e33-9915-476c-9734-2b5303539d23"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure", "subitem_title_language": "en"}]}, "item_type_id": "10001", "owner": "3", "path": ["31"], "permalink_uri": "https://nitech.repo.nii.ac.jp/records/4956", "pubdate": {"attribute_name": "公開日", "attribute_value": "2012-11-06"}, "publish_date": "2012-11-06", "publish_status": "0", "recid": "4956", "relation": {}, "relation_version_is_last": true, "title": ["Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure"], "weko_shared_id": 3}
Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure
https://nitech.repo.nii.ac.jp/records/4956
https://nitech.repo.nii.ac.jp/records/4956c3c8c917-35fc-40b9-91e8-2700b0cbffaf
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (192.5 kB)
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Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 78(22), pp.3463-3465; 2001 and may be found at http://link.aip.org/link/?apl/78/3463
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Wang, G.
× Wang, G.× Ogawa, T.× Soga, Tetsuo× Jimbo, Takashi× Umeno, Masayoshi |
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著者別名 | ||||||
姓名 | 曾我, 哲夫 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 78, 号 22, p. 3463-3465, 発行日 2001-05-28 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543432 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1376433 | |||||
関連名称 | 10.1063/1.1376433 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The phosphidization effect on dislocations in GaAs grown on Si substrate (GaAs/Si) has been investigated. It was found that the high density of dislocations in GaAs/Si heteroepitaxial layers largely enhanced the diffusion of phosphorus (P) atoms during the phosphine (PH3) plasma exposure. The incorporated P atoms strongly passivated the electrical states of residual dislocations in GaAs/Si solar cell. As a result, the PH3 plasma exposure largely increased the open circuit voltage (Voc) and the efficiency of GaAs/Si solar cell. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |