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Electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes
https://nitech.repo.nii.ac.jp/records/5133
https://nitech.repo.nii.ac.jp/records/5133a897d0e8-b902-47c7-9a06-2a809db41dd5
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (103.4 kB)
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(15),pp.2443-2445; 2003 and may be found at http://link.aip.org/link/?apl/82/2443
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Nakano, Yoshitaka
× Nakano, Yoshitaka
× Kachi, Tetsu
× Jimbo, Takashi
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| 著者別名 | ||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 82, 号 15, p. 2443-2445, 発行日 2003-04-14 |
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| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||
| item_10001_source_id_32 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00543432 | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| item_10001_relation_34 | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1567811 | |||||||||||
| 関連名称 | 10.1063/1.1567811 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | We report on the electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor (MOS) diodes with n+ source regions fabricated on sapphire substrates. The n+ regions were selectively produced in Mg-doped GaN by Si+N coimplantation and subsequent annealing at 1300°C, and then 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880°C for 5 h. Capacitance-voltage measurements at room temperature display a surface inversion feature with an onset voltage of ?2.5V and show an extremely low interface trap density less than 1×1010eV-1cm-2. These results suggest that the thermally grown β-Ga2O3/p-GaN MOS structure is a promising candidate for inversion-mode MOS field-effect transistors. | |||||||||||
| 言語 | en | |||||||||||
