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Electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes
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Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(15),pp.2443-2445; 2003 and may be found at http://link.aip.org/link/?apl/82/2443
We report on the electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor (MOS) diodes with n+ source regions fabricated on sapphire substrates. The n+ regions were selectively produced in Mg-doped GaN by Si+N coimplantation and subsequent annealing at 1300°C, and then 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880°C for 5 h. Capacitance-voltage measurements at room temperature display a surface inversion feature with an onset voltage of ?2.5V and show an extremely low interface trap density less than 1×1010eV-1cm-2. These results suggest that the thermally grown β-Ga2O3/p-GaN MOS structure is a promising candidate for inversion-mode MOS field-effect transistors.
Electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes
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