WEKO3
アイテム
Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors
https://nitech.repo.nii.ac.jp/records/5138
https://nitech.repo.nii.ac.jp/records/5138186db6eb-413c-46fb-907e-dfc40eb488f1
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (132.9 kB)
|
Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(18),pp.3110-3112; 2003 and may be found at http://link.aip.org/link/?apl/82/3110
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||||||||
| タイトル | ||||||||||||||||||||
| タイトル | Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| 言語 | ||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||
| 著者 |
Arulkumaran, S.
× Arulkumaran, S.
× 江川, 孝志
× Ishikawa, H.
× Jimbo, Takashi
|
|||||||||||||||||||
| 著者別名 | ||||||||||||||||||||
| 姓名 | Egawa, Takashi | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| 姓名 | 江川, 孝志 | |||||||||||||||||||
| 言語 | ja | |||||||||||||||||||
| 姓名 | エガワ, タカシ | |||||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||||
| 著者別名 | ||||||||||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 82, 号 18, p. 3110-3112, 発行日 2003-05-05 |
|||||||||||||||||||
| 出版者 | ||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| ISSN | ||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||
| 収録物識別子 | AA00543432 | |||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1571655 | |||||||||||||||||||
| 関連名称 | 10.1063/1.1571655 | |||||||||||||||||||
| 内容記述 | ||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||
| 内容記述 | We report on the studies of the temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400°C. The results show that the temperature dependence of gate-leakage current for AlGaN/GaN HEMTs at subthreshold regime (VGS = -6.5V) have both negative and positive trends. It has been observed that the leakage current decreases with the temperature up to 80°C. Above 80°C, the leakage current increases with the temperature. The negative temperature dependence of leakage current with the activation energy +0.61 eV is due to the impact ionization. The positive temperature dependence of leakage current with the activation energy -0.20 eV is due to the surface related traps, and the activation energy -0.99 eV is due to the temperature assisted tunneling mechanism. The drain voltage at a fixed drain-leakage current reveals the occurrence of both positive (+0.28 V/K) and negative (-0.53 V/K) temperature coefficients. | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
