WEKO3
アイテム
{"_buckets": {"deposit": "bdff34e1-54be-48b4-98a4-52a107cacd3f"}, "_deposit": {"created_by": 3, "id": "2265", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "2265"}, "status": "published"}, "_oai": {"id": "oai:nitech.repo.nii.ac.jp:00002265", "sets": ["404"]}, "author_link": ["6308", "6309", "6307"], "item_9_alternative_title_1": {"attribute_name": "その他(別言語等)のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "トリュウ ナイホウ コウグ ニヨル SiC タンケッショウ ノ ケンマ ノ ココロミ"}, {"subitem_alternative_title": "The Trial of Polishing of the Single-Crystal Silicon Carbide (SiC) by an Abrasive Grain Intension Polishing Pad"}]}, "item_9_biblio_info_5": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-03-31", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "53", "bibliographicPageStart": "49", "bibliographicVolumeNumber": "7", "bibliographic_titles": [{"bibliographic_title": "セラミックス基盤工学研究センター年報 = Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology"}]}]}, "item_9_description_10": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "In recent years, the single-crystal silicon carbide (SiC) attracts attention as a substrate of a power device or LED. The single-crystalSiC becomes a substrate through various processing processes. At a back process, polishing process is needed. Conventionally, afinal polishing of single-crystal SiC was performed by loose abrasive grain polishing. However, the removal rate of polishing waslow. This was set to one of the causes of a cost rise of the single-crystal SiC wafer. In this research, the polishing examinationwas performed using the advanced-type Loosely Held Abrasive (LHA) pad which is a polishing pad involving abrasive grains,and water or a polishing lubricant containing the additive agent was supplyied in order to improve the polishing process. Whenthis process is introduced into polishing process of the single-crystal SiC, polishing process in a short time is attained and thereis possibility of a cost cut. It leads to the spread of future single-crystal SiC wafers.", "subitem_description_type": "Other"}]}, "item_9_description_11": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_9_full_name_4": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "6309", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Yamaguchi, Yukio"}]}]}, "item_9_heading_13": {"attribute_name": "見出し", "attribute_value_mlt": [{"subitem_heading_banner_headline": "\u003c総説\u003e", "subitem_heading_language": "ja"}, {"subitem_heading_banner_headline": "\u003cReview\u003e", "subitem_heading_language": "en"}]}, "item_9_publisher_6": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "名古屋工業大学セラミックス基盤工学研究センター"}]}, "item_9_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "13471694", "subitem_source_identifier_type": "ISSN"}]}, "item_9_source_id_8": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA11625130", "subitem_source_identifier_type": "NCID"}]}, "item_9_version_type_9": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "山口, 幸男"}, {"creatorName": "ヤマグチ, ユキオ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "6307", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "佐藤, 誠"}], "nameIdentifiers": [{"nameIdentifier": "6308", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-12-07"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "arnit2007_49-53.pdf", "filesize": [{"value": "1.1 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1100000.0, "url": {"label": "本文_fulltext", "url": "https://nitech.repo.nii.ac.jp/record/2265/files/arnit2007_49-53.pdf"}, "version_id": "91ac0096-a783-47b1-adad-5bad542d4db3"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "砥粒内包工具によるSiC単結晶の研磨の試み", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "砥粒内包工具によるSiC単結晶の研磨の試み"}]}, "item_type_id": "9", "owner": "3", "path": ["404"], "permalink_uri": "https://nitech.repo.nii.ac.jp/records/2265", "pubdate": {"attribute_name": "公開日", "attribute_value": "2011-08-10"}, "publish_date": "2011-08-10", "publish_status": "0", "recid": "2265", "relation": {}, "relation_version_is_last": true, "title": ["砥粒内包工具によるSiC単結晶の研磨の試み"], "weko_shared_id": -1}
砥粒内包工具によるSiC単結晶の研磨の試み
https://nitech.repo.nii.ac.jp/records/2265
https://nitech.repo.nii.ac.jp/records/22657b2e6a29-d000-451d-9673-e80063b01078
名前 / ファイル | ライセンス | アクション |
---|---|---|
本文_fulltext (1.1 MB)
|
|
Item type | 紀要論文 / Departmental Bulletin Paper_04(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2011-08-10 | |||||
タイトル | ||||||
タイトル | 砥粒内包工具によるSiC単結晶の研磨の試み | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | トリュウ ナイホウ コウグ ニヨル SiC タンケッショウ ノ ケンマ ノ ココロミ | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | The Trial of Polishing of the Single-Crystal Silicon Carbide (SiC) by an Abrasive Grain Intension Polishing Pad | |||||
著者 |
山口, 幸男
× 山口, 幸男× 佐藤, 誠 |
|||||
著者別名 | ||||||
姓名 | Yamaguchi, Yukio | |||||
書誌情報 |
セラミックス基盤工学研究センター年報 = Annual report of the Ceramics Research Laboratory Nagoya Institute of Technology 巻 7, p. 49-53, 発行日 2008-03-31 |
|||||
出版者 | ||||||
出版者 | 名古屋工業大学セラミックス基盤工学研究センター | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 13471694 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11625130 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | In recent years, the single-crystal silicon carbide (SiC) attracts attention as a substrate of a power device or LED. The single-crystalSiC becomes a substrate through various processing processes. At a back process, polishing process is needed. Conventionally, afinal polishing of single-crystal SiC was performed by loose abrasive grain polishing. However, the removal rate of polishing waslow. This was set to one of the causes of a cost rise of the single-crystal SiC wafer. In this research, the polishing examinationwas performed using the advanced-type Loosely Held Abrasive (LHA) pad which is a polishing pad involving abrasive grains,and water or a polishing lubricant containing the additive agent was supplyied in order to improve the polishing process. Whenthis process is introduced into polishing process of the single-crystal SiC, polishing process in a short time is attained and thereis possibility of a cost cut. It leads to the spread of future single-crystal SiC wafers. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
見出し | ||||||
大見出し | <総説> | |||||
言語 | ja | |||||
見出し | ||||||
大見出し | <Review> | |||||
言語 | en |