WEKO3
アイテム
Excess carrier lifetime of 3C-SiC measured by the microwave photoconductivity decay method
https://nitech.repo.nii.ac.jp/records/4484
https://nitech.repo.nii.ac.jp/records/448481cd20de-f39a-4190-ab4b-6db7e7856608
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文_fulltext (81.1 kB)
|
Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 70(13),pp.1745-1747 ; 1997 and may be found at http://link.aip.org/link/?apl/70/1745
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Excess carrier lifetime of 3C-SiC measured by the microwave photoconductivity decay method | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| 資源タイプ | journal article | |||||||||||||||
| 著者 |
Ichimura, Masaya
× Ichimura, Masaya
× Tajiri, H.
× Morita, Y.
× Yamada, N.
× Usami, A.
|
|||||||||||||||
| 著者別名 | ||||||||||||||||
| 姓名 | 市村, 正也 | |||||||||||||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 70, 号 13, p. 1745-1747, 発行日 1997-03-31 |
|||||||||||||||
| 出版者 | ||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||
| 言語 | en | |||||||||||||||
| ISSN | ||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||
| 収録物識別子 | AA00543431 | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||
| 内容記述 | ||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||
| 内容記述 | Excess carrier lifetime of 3C-SiC grown on a Si substrate by chemical vapor deposition is measured at room temperature by the noncontact microwave photoconductivity decay method. A N2 laser is used to excite carriers in the SiC layer. The measured decay curves of the excess carrier concentration have fast (τ?3 μs) and slow (τ>200 μs) components. The origin of the slow decay is discussed on the basis of the numerical simulation of the recombination process, and the presence of traps with a very small electron capture cross section (<1×10-21cm2) is predicted. | |||||||||||||||
| 言語 | en | |||||||||||||||
