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Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3 plasma
https://nitech.repo.nii.ac.jp/records/4782
https://nitech.repo.nii.ac.jp/records/4782f03eb5dd-0d28-41b5-8da9-c09a5fabaab9
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (58.8 kB)
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Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 76(6), pp.730-732; 2000 and may be found at http://link.aip.org/link/?apl/76/730
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||||||
| タイトル | ||||||||||||||||||||||
| タイトル | Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3 plasma | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 言語 | ||||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||
| 著者 |
Wang, G.
× Wang, G.
× Ogawa, T.
× Umeno, Masayoshi
× 曾我, 哲夫
× Jimbo, Takashi
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| 著者別名 | ||||||||||||||||||||||
| 姓名 | 梅野, 正義 | |||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||
| 姓名 | Soga, Tetsuo | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| 姓名 | 曾我, 哲夫 | |||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||
| 姓名 | ソガ, テツオ | |||||||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||||||||||||
| bibliographic_information |
en : APPLIED PHYSICS LETTERS 巻 76, 号 6, p. 730-732, 発行日 2000-02-07 |
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| 出版者 | ||||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
| ISSN | ||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||||
| 収録物識別子 | AA00543432 | |||||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||
| 内容記述 | ||||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||||
| 内容記述 | A promising passivation method for GaAs solar cell grown on Si substrate (GaAs/Si solar cell) by phosphine-added hydrogen (PH3/H2) plasma exposure has been envisaged. The defect-hydrogenation and the surface-phosphidization effects of GaAs/Si solar cell are realized simultaneously by this single passivation process. Consequently, surface recombination states are reduced and the minority carrier lifetime is increased, resulting in a significant reduction in saturation current density (J0) of the GaAs/Si p-n junction. High open-circuit voltage (0.93 V) and fill factor (80.9%) are obtained for the PH3 plasma exposed GaAs/Si solar cells. As a result, the conversion efficiency is increased from 15.9% to 18.6%. This approach provides a simple and effective method to improve the photovoltaic properties of GaAs/Si solar cell. | |||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||
