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Visualization of photoexcited free carriers by scanning near-field millimeter-wave microscopy
https://nitech.repo.nii.ac.jp/records/4835
https://nitech.repo.nii.ac.jp/records/4835736b5e47-61bc-40f0-bf41-3392fa9f085b
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (386.2 kB)
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Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 77(1),pp.148-150 ; 2000 and may be found at http://link.aip.org/link/?apl/77/148
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Visualization of photoexcited free carriers by scanning near-field millimeter-wave microscopy | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Nozokido, Tatsuo
× Nozokido, Tatsuo× Bae, Jongsuck× Mizuno, Koji |
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著者別名 | ||||||
姓名 | 裵, 鐘石 | |||||
書誌情報 |
APPLIED PHYSICS LETTERS 巻 77, 号 1, p. 148-150, 発行日 2000-07-03 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.126905 | |||||
関連名称 | 10.1063/1.126905 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Visualization of transition phenomena of photoexcited free carriers by scanning near-field millimeter-wave microscopy has been demonstrated. A scanning millimeter-wave microscope using a metal slit-type probe and an image reconstruction algorithm based on computerized tomographic imaging has been used in the experiment to achieve two-dimensional time-resolved imaging. Experiments performed at 60 GHz (λ = 5mm) under room temperature conditions show that generation, extinction, and diffusion processes of photoexcited free carriers generated in the silicon layer of a silicon on quartz substrate can be imaged with a time division of one nanosecond and a spatial resolution of 110 μm ( ? λ/45). | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |