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Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
https://nitech.repo.nii.ac.jp/records/4912
https://nitech.repo.nii.ac.jp/records/4912697139f4-94b9-4008-b4fc-c5bf40b670b9
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (141.1 kB)
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Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 89(2), pp.1046- 1052 ; 2001 and may be found at http://link.aip.org/link/?jap/89/1046
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||||
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| 公開日 | 2012-11-06 | |||||||||||||||||||||||
| タイトル | ||||||||||||||||||||||||
| タイトル | Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
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| 言語 | eng | |||||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||||
| 著者 |
Jiang, H.
× Jiang, H.
× Zhao, G. Y.
× Ishikawa, H.
× 江川, 孝志
× Jimbo, Takashi
× Umeno, Masayoshi
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| 著者別名 | ||||||||||||||||||||||||
| 姓名 | Egawa, Takashi | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| 姓名 | 江川, 孝志 | |||||||||||||||||||||||
| 言語 | ja | |||||||||||||||||||||||
| 姓名 | エガワ, タカシ | |||||||||||||||||||||||
| 言語 | ja-Kana | |||||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||||
| 姓名 | 神保, 孝志 | |||||||||||||||||||||||
| 著者別名 | ||||||||||||||||||||||||
| 姓名 | 梅野, 正義 | |||||||||||||||||||||||
| 書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 89, 号 2, p. 1046-1052, 発行日 2001-01-15 |
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| 出版者 | ||||||||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
| ISSN | ||||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||||||||||||
| item_10001_source_id_32 | ||||||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||||||
| 収録物識別子 | AA00693547 | |||||||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||||||||
| item_10001_relation_34 | ||||||||||||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1334923 | |||||||||||||||||||||||
| 関連名称 | 10.1063/1.1334923 | |||||||||||||||||||||||
| 内容記述 | ||||||||||||||||||||||||
| 内容記述タイプ | Other | |||||||||||||||||||||||
| 内容記述 | The normal-incidence reflectance measurement was employed to obtain the free exciton transition energy (EFX) of AlGaN alloys in AlxGa1-xN/GaN/sapphire heterostructure grown by metalorganic chemical vapor deposition. It was found that the thickness variation of the AlGaN layer may cause a noticeable change in the line shape of reflectance spectrum and impede the identification of the desired excitonic position. By using a reflection model of two absorbing layers with a transparent substrate, the experimental reflectance spectra were theoretically simulated and utilized to explain the reflection mechanism in AlxGa1-xN/GaN heterostructures. On the basis of the above analysis, the feasibility of the reflectance measurement for such heterostructures is confirmed. At room temperature, the EFXs obtained from the fitting showed an excellent agreement with the corresponding peak energies in the photoluminescence spectra. Furthermore, at the optical energy position about 100 meV above the EFX, the spectral feature of exciton-LO phonon interaction was observed in the reflectance spectrum record for low Al composition (x?0.16). Using the Al mole fraction derived from x-ray diffraction measurement, the bowing parameter of the epitaxial AlGaN layer was determined. In the range of 0?x<0.3, the resulting bowing parameter shows a downward value of 0.53 eV. | |||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||
