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Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy
https://nitech.repo.nii.ac.jp/records/4946
https://nitech.repo.nii.ac.jp/records/49460a67a3cc-8204-4b9b-97ad-29650d19fa35
| 名前 / ファイル | ライセンス | アクション |
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本文_fulltext (204.1 kB)
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Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 89(9), pp.5215- 5218 ; 2001 and may be found at http://link.aip.org/link/?jap/89/5215
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2012-11-06 | |||||
| タイトル | ||||||
| タイトル | Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Saravanan, S.
× Saravanan, S.× Hayashi, Y.× 曾我, 哲夫× Jimbo, Takashi× Umeno, Masayoshi× Sato, N.× Yonehara, T. |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 3257 | |||||
| 識別子Scheme | NRID | |||||
| 識別子URI | http://rns.nii.ac.jp/nr/1000020197007 | |||||
| 識別子 | 1000020197007 | |||||
| 姓名 | Soga, Tetsuo | |||||
| 言語 | en | |||||
| 姓名 | 曾我, 哲夫 | |||||
| 言語 | ja | |||||
| 姓名 | ソガ, テツオ | |||||
| 言語 | ja-Kana | |||||
| 識別子Scheme | ISNI | |||||
| 識別子URI | http://www.isni.org/isni/ | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 4028 | |||||
| 姓名 | 神保, 孝志 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 4015 | |||||
| 姓名 | 梅野, 正義 | |||||
| 書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 89, 号 9, p. 5215-5218, 発行日 2001-05-01 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00218979 | |||||
| 書誌レコードID（NCID） | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00693547 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1362339 | |||||
| 関連名称 | 10.1063/1.1362339 | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The initial growth of GaAs films on a Si/porous Si/Si (SPS) substrate has been investigated using reflection high-energy electron diffraction. The morphology and the thickness have been examined by a Nomarski optical microscope and scanning electron microscope, respectively. The results of the low temperature photoluminescence studies have shown that a significant reduction in the residual thermal tensile stress can be achieved with reduced growth temperature. The 77 K photoluminescence spectra for GaAs/Si show a strain-induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.45 kbar acting on the GaAs layer where the same for GaAs/SPS grown at 450°C is 1.69 kbar. The results have shown that a SPS substrate with the combination of low temperature growth is a promising candidate for obtaining GaAs films with low stress. | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
