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Compositional instability in InAlN/GaN lattice-matched epitaxy
https://nitech.repo.nii.ac.jp/records/5616
https://nitech.repo.nii.ac.jp/records/5616a16e8736-7790-4601-b48a-33adf05517e8
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (979.0 kB)
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Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 100, 092101 ; 2012 and may be found at http://dx.doi.org/10.1063/1.3690890
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2013-03-30 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Compositional instability in InAlN/GaN lattice-matched epitaxy | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Wei, Qiyuan
× Wei, Qiyuan× Li, TiHuang. Yin× MinHuang, Junying× Chen, Zhao× Egawa, Takashi× Ponce, Fernando A |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
書誌情報 |
Applied Physics Letters 巻 100, 号 9, p. 092101-1-092101-3, 発行日 2012-02-27 |
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出版者 | ||||||
出版者 | American Institute of Physics | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00036951 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.3690890 | |||||
関連名称 | 10.1063/1.3690890 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The In xAl 1-xN/GaN system is found to show compositional instability at the lattice-matched composition (x = 0.18) in epitaxial layers grown by metal organic chemical vapor deposition. The breakdown in compositional homogeneity is triggered by threading dislocations with a screw component propagating from the GaN underlayer, which tend to open up into V-grooves at a certain thickness of the In xAl 1-xN layer. The V-grooves coalesce at ?200 nm and are filled with material that exhibits a significant drop in indium content and a broad luminescence peak. Transmission electron microscopy suggests that the structural breakdown is due to heterogeneous nucleation and growth at the facets of the V-grooves. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |